The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction
DC Field | Value | Language |
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dc.contributor.author | Kim, Sun-Woo | - |
dc.contributor.author | Kirn, Seung-Hwan | - |
dc.contributor.author | Kim, Gwang-Sik | - |
dc.contributor.author | Choi, Changhwan | - |
dc.contributor.author | Choi, Rino | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2021-09-03T15:35:35Z | - |
dc.date.available | 2021-09-03T15:35:35Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-12-28 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/86497 | - |
dc.description.abstract | We demonstrate the contact resistance reduction for III-V semiconductor-based electrical and optical devices using the interfacial dipole effect of ultrathin double interlayers in a metal-interlayers-semiconductor (M-I-S) structure. An M-I-S structure blocks metal-induced gap states (MIGS) to a sufficient degree to alleviate Fermi level pinning caused by MIGS, resulting in contact resistance reduction. In addition, the ZnO/TiO2 interlayers of an M-I-S structure induce an interfacial dipole effect that produces Schottky barrier height (Phi(B)) reduction, which reduces the specific contact resistivity (rho(c)) of the metal/n-type III-V semiconductor contact. As a result, the Ti/ZnO(0.5 nm)/TiO2(0.5 nm)/n-GaAs metal-double interlayers-semiconductor (M-DI-S) structure achieved a rho(c) of 2.51 x 10(-5) Omega.cm(2), which exhibited an similar to 42 000x reduction and an similar to 40X reduction compared to the Ti/n-GaAs metal-semiconductor (M-S) contact and the Ti/TiO2(0.5 nm)/n-GaAs M-I-S structure, respectively. The interfacial dipole at the ZnO/TiO2 interface was determined to be approximately -0.104 eV, which induced a decrease in the effective work function of Ti and, therefore, reduced Phi(B). X-ray photoelectron spectroscopy analysis of the M-DI-S structure also confirmed the existence of the interfacial dipole. On the basis of these results, the M-DI-S structure offers a promising nonalloyed Ohmic contact scheme for the development of III-V semiconductor-based applications. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | SCHOTTKY CONTACTS | - |
dc.subject | GAAS MOSFETS | - |
dc.subject | CHANNEL | - |
dc.subject | CMOS | - |
dc.subject | PASSIVATION | - |
dc.subject | MOBILITY | - |
dc.subject | DIODES | - |
dc.subject | STATES | - |
dc.subject | SHIFT | - |
dc.subject | GAP | - |
dc.title | The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1021/acsami.6b10376 | - |
dc.identifier.scopusid | 2-s2.0-85008214362 | - |
dc.identifier.wosid | 000391081700073 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.8, no.51, pp.35614 - 35620 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 8 | - |
dc.citation.number | 51 | - |
dc.citation.startPage | 35614 | - |
dc.citation.endPage | 35620 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | SCHOTTKY CONTACTS | - |
dc.subject.keywordPlus | GAAS MOSFETS | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | CMOS | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordPlus | SHIFT | - |
dc.subject.keywordPlus | GAP | - |
dc.subject.keywordAuthor | gallium arsenide | - |
dc.subject.keywordAuthor | interfacial dipole | - |
dc.subject.keywordAuthor | Schottky barrier | - |
dc.subject.keywordAuthor | specific contact resistivity | - |
dc.subject.keywordAuthor | Fermi level pinning | - |
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