Chemical etching behavior of non-polar GaN sidewalls
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Younghun | - |
dc.contributor.author | Jang, Soohwan | - |
dc.contributor.author | Baik, Kwang Hyeon | - |
dc.contributor.author | Kim, Hong-Yeol | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-03T15:48:57Z | - |
dc.date.available | 2021-09-03T15:48:57Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-12-15 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/86541 | - |
dc.description.abstract | Wet-chemical etching of non-polar GaN films can be applied to form textured surfaces that enhance light extraction efficiency in light-emitting diodes. The etch-induced shapes (trigonal prisms) on the sidewalls of concave and convex mesa patterns defined on a-plane GaN films exhibited an alignment towards the [0001] direction. An etch-rate vector model that includes one fast etching direction and two etching directions normal to the fast direction was developed to explain the creation of the etch-induced trigonal prisms. The large lattice parameter along with [000 (1) over bar] and single dangling bond of a-plane surface supply enough space for attack of OH- ions, which is confirmed by XPS analysis that indicates the increased hydroxide spectra on a-plane after KOH etching and these are the reason for different etch rate and formation of trigonal prisms. (C) 2016 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | NITRIDE | - |
dc.subject | POLARIZATION | - |
dc.subject | POLAR | - |
dc.title | Chemical etching behavior of non-polar GaN sidewalls | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2016.08.039 | - |
dc.identifier.scopusid | 2-s2.0-85002880170 | - |
dc.identifier.wosid | 000389590400018 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.456, pp.108 - 112 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 456 | - |
dc.citation.startPage | 108 | - |
dc.citation.endPage | 112 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | POLAR | - |
dc.subject.keywordAuthor | Etching | - |
dc.subject.keywordAuthor | Non-polar | - |
dc.subject.keywordAuthor | Gallium nitride | - |
dc.subject.keywordAuthor | Semiconducting III-V materials | - |
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