Chemical etching behavior of non-polar GaN sidewalls
- Authors
- Jung, Younghun; Jang, Soohwan; Baik, Kwang Hyeon; Kim, Hong-Yeol; Kim, Jihyun
- Issue Date
- 15-12월-2016
- Publisher
- ELSEVIER
- Keywords
- Etching; Non-polar; Gallium nitride; Semiconducting III-V materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.456, pp.108 - 112
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 456
- Start Page
- 108
- End Page
- 112
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/86541
- DOI
- 10.1016/j.jcrysgro.2016.08.039
- ISSN
- 0022-0248
- Abstract
- Wet-chemical etching of non-polar GaN films can be applied to form textured surfaces that enhance light extraction efficiency in light-emitting diodes. The etch-induced shapes (trigonal prisms) on the sidewalls of concave and convex mesa patterns defined on a-plane GaN films exhibited an alignment towards the [0001] direction. An etch-rate vector model that includes one fast etching direction and two etching directions normal to the fast direction was developed to explain the creation of the etch-induced trigonal prisms. The large lattice parameter along with [000 (1) over bar] and single dangling bond of a-plane surface supply enough space for attack of OH- ions, which is confirmed by XPS analysis that indicates the increased hydroxide spectra on a-plane after KOH etching and these are the reason for different etch rate and formation of trigonal prisms. (C) 2016 Elsevier B.V. All rights reserved.
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