Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 degrees C
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, J. Y. | - |
dc.contributor.author | Kim, S. | - |
dc.contributor.author | Hwang, B-U | - |
dc.contributor.author | Lee, N-E | - |
dc.contributor.author | Lee, S. Y. | - |
dc.date.accessioned | 2021-09-03T16:08:38Z | - |
dc.date.available | 2021-09-03T16:08:38Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-12 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/86627 | - |
dc.description.abstract | Silicon indium zinc oxide (SIZO) thin film transistors (TFTs) have been fabricated on a flexible polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly-4vinyl phenol (PVP) and Al2O3. To improve the mechanical stability, Al2O3 has been used as a buffer layer on the flexible substrate. The Al2O3 layer of hybrid gate dielectrics protected the organic gate dielectric and improved mechanical flexibility. The different surface roughness of the gate dielectrics is investigated. The performance of the device with smooth surface roughness was significantly improved. Finally, the electrical characteristics of the TFTs with hybrid gate dielectrics were measured as well as the promising electrical endurance characteristics at the bending radius of 5 mm. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | ZINC-OXIDE | - |
dc.subject | DEVICES | - |
dc.subject | SILICON | - |
dc.subject | LAYER | - |
dc.title | Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 degrees C | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, S. | - |
dc.identifier.doi | 10.1088/0268-1242/31/12/125007 | - |
dc.identifier.scopusid | 2-s2.0-84997207192 | - |
dc.identifier.wosid | 000396045500001 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.12 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 31 | - |
dc.citation.number | 12 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | semiconductor | - |
dc.subject.keywordAuthor | thin film transistor | - |
dc.subject.keywordAuthor | hybrid gate dielectric | - |
dc.subject.keywordAuthor | SiInZnO | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.