Fatigue Behaviors of Silicon Nanowire Field-Effect Transistors on Bendable Substrate
DC Field | Value | Language |
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dc.contributor.author | Kim, Yoonjoong | - |
dc.contributor.author | Jeon, Youngin | - |
dc.contributor.author | Lim, Doohyeok | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-03T16:16:39Z | - |
dc.date.available | 2021-09-03T16:16:39Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-12 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/86672 | - |
dc.description.abstract | In this study, we fabricated an island-structured silicon nanowire (SiNW) field-effect transistor (FET) on an Ecoflex substrate and analyzed the device reliability against the bending fatigue. A SiNW-FET was fabricated on a plastic substrate and this FET on the plastic substrate was transferred onto the Ecoflex substrate. Compared to a SiNW-FET on a plastic substrate, the SiNW-FET with the island plastic structure on the Ecoflex substrate showed the stable electrical characteristics under various bending strain. Variations less than 10% of the threshold voltage and transconductance were observed under the bending strain of 15%. Moreover, the electrical characteristics were maintained even after 2000 bending cycles. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | MOSFETS | - |
dc.title | Fatigue Behaviors of Silicon Nanowire Field-Effect Transistors on Bendable Substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1166/jnn.2016.13671 | - |
dc.identifier.scopusid | 2-s2.0-84994227140 | - |
dc.identifier.wosid | 000387279100110 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.12, pp.12823 - 12826 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 16 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 12823 | - |
dc.citation.endPage | 12826 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordAuthor | Silicon-Nanowire | - |
dc.subject.keywordAuthor | Field-Effect Transistor | - |
dc.subject.keywordAuthor | Ecoflex Substrate | - |
dc.subject.keywordAuthor | Island Structure | - |
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