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Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates

Authors
Yun, JunggwonLee, MyeongwonJeon, YounginKim, MinsukKim, YoonjoongLim, DoohyeokKim, Sangsig
Issue Date
12월-2016
Publisher
TSINGHUA UNIV PRESS
Keywords
negative-AND (NAND) logic gates; bendable electronics; silicon nanowires; nanowatt operation
Citation
NANO RESEARCH, v.9, no.12, pp.3656 - 3662
Indexed
SCIE
SCOPUS
Journal Title
NANO RESEARCH
Volume
9
Number
12
Start Page
3656
End Page
3662
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/86779
DOI
10.1007/s12274-016-1235-2
ISSN
1998-0124
Abstract
In this paper, we propose a novel construction of silicon nanowire (SiNW) negative-AND (NAND) logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high I (on/off) ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties.
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