Improving Current Density of 4H-SiC Junction Barrier Schottky Diode with Wide Trench Etching
DC Field | Value | Language |
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dc.contributor.author | Kyoung, Sinsu | - |
dc.contributor.author | Jung, Eun Sik | - |
dc.contributor.author | Kang, Tai Young | - |
dc.contributor.author | Sung, Man Young | - |
dc.date.accessioned | 2021-09-03T17:30:10Z | - |
dc.date.available | 2021-09-03T17:30:10Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-11 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/86985 | - |
dc.description.abstract | The 4H-SiC trench junction barrier Schottky (TJBS) diode was proposed in conjunction with a deep p(+) junction using a trench etching process in order to reduce the reverse leakage current in the off-state for high-voltage applications above 1200 V. However, the 4H-SiC TJBS could not improve the forward current density. Addressing this limitation in this paper, we propose a wide trench JBS (WTJBS) that improves the current density without increasing the reverse leakage current using a shallow and wide trench etching process. The wide trench etching of the WTJBS produces a deeper junction depth, similar to the TJBS, and expands the area of the Schottky junction in a limited cell-pitch space. Comparing the results of the fabricated samples under the same process conditions, the WTJBS was found to have an enhanced current density and a low leakage current as compared to the TJBS and the JBS. This study shows that by using a suitable trench etching process, we can improve the current density of the SiC SBD with a low leakage current. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Improving Current Density of 4H-SiC Junction Barrier Schottky Diode with Wide Trench Etching | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Man Young | - |
dc.identifier.doi | 10.1166/jnn.2016.13574 | - |
dc.identifier.scopusid | 2-s2.0-84992520747 | - |
dc.identifier.wosid | 000387278200110 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.11, pp.11686 - 11691 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 16 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 11686 | - |
dc.citation.endPage | 11691 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordAuthor | 4H-SiC SBD | - |
dc.subject.keywordAuthor | Trench JBS | - |
dc.subject.keywordAuthor | Wide Trench JBS | - |
dc.subject.keywordAuthor | Leakage Reduction | - |
dc.subject.keywordAuthor | Current Density Improving | - |
dc.subject.keywordAuthor | JFET Resistance | - |
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