Improving Current Density of 4H-SiC Junction Barrier Schottky Diode with Wide Trench Etching
- Authors
- Kyoung, Sinsu; Jung, Eun Sik; Kang, Tai Young; Sung, Man Young
- Issue Date
- 11월-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- 4H-SiC SBD; Trench JBS; Wide Trench JBS; Leakage Reduction; Current Density Improving; JFET Resistance
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.11, pp.11686 - 11691
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 11
- Start Page
- 11686
- End Page
- 11691
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/86985
- DOI
- 10.1166/jnn.2016.13574
- ISSN
- 1533-4880
- Abstract
- The 4H-SiC trench junction barrier Schottky (TJBS) diode was proposed in conjunction with a deep p(+) junction using a trench etching process in order to reduce the reverse leakage current in the off-state for high-voltage applications above 1200 V. However, the 4H-SiC TJBS could not improve the forward current density. Addressing this limitation in this paper, we propose a wide trench JBS (WTJBS) that improves the current density without increasing the reverse leakage current using a shallow and wide trench etching process. The wide trench etching of the WTJBS produces a deeper junction depth, similar to the TJBS, and expands the area of the Schottky junction in a limited cell-pitch space. Comparing the results of the fabricated samples under the same process conditions, the WTJBS was found to have an enhanced current density and a low leakage current as compared to the TJBS and the JBS. This study shows that by using a suitable trench etching process, we can improve the current density of the SiC SBD with a low leakage current.
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