Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET With Metal-Interlayer-Semiconductor Source/Drain
DC Field | Value | Language |
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dc.contributor.author | Shin, Changho | - |
dc.contributor.author | Kim, Jeong-Kyu | - |
dc.contributor.author | Kim, Gwang-Sik | - |
dc.contributor.author | Lee, Hyunjae | - |
dc.contributor.author | Shin, Changhwan | - |
dc.contributor.author | Kim, Jong-Kook | - |
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2021-09-03T17:39:48Z | - |
dc.date.available | 2021-09-03T17:39:48Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-11 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/87038 | - |
dc.description.abstract | The impact of process-induced random dopant fluctuation (RDF)-induced threshold voltage (Vth) variation on the performance of 7-nm n-type germanium (Ge) FinFETs with and without a metal-interlayer-semiconductor (MIS) source/drain (S/D) structure is investigated using 3-D TCAD simulations. In order to reduce the RDF-induced Vth variation, an MIS S/D structure with a heavily doped n-type zinc oxide (ZnO) interlayer is used in the S/D region of the Ge FinFET. Thus, without performance degradation, the Ge FinFET with an MIS S/D structure achieves approximately threefold reduction in the RDF-induced Vth variation (versus without an MIS S/D structure). The impact of various fin parameters (i. e., fin height and fin width) on the RDF-induced Vth variation is also investigated. It is noteworthy that variation is suppressed as the fin height (fin width) increases (decreases). | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET With Metal-Interlayer-Semiconductor Source/Drain | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jong-Kook | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1109/TED.2016.2606511 | - |
dc.identifier.scopusid | 2-s2.0-84988600872 | - |
dc.identifier.wosid | 000389340400003 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.11, pp.4167 - 4172 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 63 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 4167 | - |
dc.citation.endPage | 4172 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | FinFET | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | interlayer | - |
dc.subject.keywordAuthor | random dopant fluctuation (RDF) | - |
dc.subject.keywordAuthor | threshold voltage variation | - |
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