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A facile method for the synthesis of transfer-free graphene from co-deposited nickel-carbon layers

Authors
An, SehoonLee, Geun-HyukJang, Seong WooHwang, SehoonLim, Sang HoHan, Seunghee
Issue Date
11월-2016
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
CARBON, v.109, pp.154 - 162
Indexed
SCIE
SCOPUS
Journal Title
CARBON
Volume
109
Start Page
154
End Page
162
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/87095
DOI
10.1016/j.carbon.2016.07.066
ISSN
0008-6223
Abstract
We report a facile synthesis method for the preparation of transfer-free graphene on dielectric substrates from co-deposited nickel carbon (Ni-C) films. To fabricate 75-nm-thick Ni-C layers on top of dielectric substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr by flowing a gas mixture of argon (Ar; flow rate: 5 sccm) and methane (CH4; flow rate: 1 sccm), while 200 W DC input power was applied to a Ni target. Then, the sample was annealed at 1000 degrees C for 4 min at a pressure of 1 Torr and Ar flow rate of 200 sccm. The Ni-C layer was removed by a 0.5 M FeCl3 aqueous solution, and graphene was directly obtained on the dielectric substrate without any additional transfer process. The graphene quality was significantly influenced by annealing conditions, CH4 flow rate during co-deposition, and Ni-C thin film thickness. Furthermore, temperature modulation was conducted to decrease the graphene sheet defect coverage down to 7.2%. Sheet resistance and transmittance (550 nm) of the transfer-free graphene obtained under optimal conditions were 1.9 k Omega 162 sq(-1) and 93.9%, respectively. This facile non-transfer process will facilitate future research on graphene as well as its industrial applications. (C) 2016 Elsevier Ltd. All rights reserved.
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공과대학 (신소재공학부)
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