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Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates

Authors
Park, SukhyungCho, KyoungahOh, HyungonKim, Sangsig
Issue Date
3-10월-2016
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.109, no.14
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
109
Number
14
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/87211
DOI
10.1063/1.4964133
ISSN
0003-6951
Abstract
In this study, we report the electrical and mechanical characteristics of fully transparent indium zinc oxide (IZO) thin-film transistors (TFTs) fabricated on stress-relieving bendable substrates. An IZO TFT on a stress-relieving substrate can operate normally at a bending radius of 6mm, while an IZO TFT on a normal plastic substrate fails to operate normally at a bending radius of 15mm. A plastic island with high Young's modulus embedded on a soft elastomer layer with low Young's modulus plays the role of a stress-relieving substrate for the operation of the bent IZO TFT. The stress and strain distributions over the IZO TFT will be analyzed in detail in this paper. Published by AIP Publishing.
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Kim, Sang sig
공과대학 (전기전자공학부)
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