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Analytical Model of the Parasitic Bipolar Junction Transistor in Low-Doped Double-Gate FinFETs for Pass-Gate Circuits

Authors
Yi, BoramLee, Chang-YongOh, Jin-HwanLee, Boung JunSeo, SungkyuYang, Ji-Woon
Issue Date
10월-2016
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Compact modeling; double-gate (DG) MOSFETs; FinFETs; floating-body (FB); parasitic bipolar junction transistor (BJT)
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.10, pp.3864 - 3868
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume
63
Number
10
Start Page
3864
End Page
3868
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/87241
DOI
10.1109/TED.2016.2600625
ISSN
0018-9383
Abstract
The transient parasitic bipolar effect in floating-body double-gate FinFETs with low-doped bodies is analytically modeled. The obtained analytical transient bipolar current and charge models have predictive power for various device structures. These models are applicable when the majority carrier concentration in accumulation conditions noticeably exceeds the body doping concentration. The physical insights obtained from the developed current model are used to analyze the transient bipolar current I-BJT(t) for different device structures. It is shown that the gate-body-source capacitive coupling is an important parameter in I-BJT(t) control.
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