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Influence of Annealing on Solution-Processed Indium Oxide Thin-Film Transistors Under Ambient Air and Wet Conditions
- Authors
- Kim, Bo Sung; Kim, Hyun Jae
- Issue Date
- 9월-2016
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Indium oxide (In2O3); oxide semiconductor; oxide thin-film transistor (TFT); solution process
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.9, pp.3558 - 3561
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 63
- Number
- 9
- Start Page
- 3558
- End Page
- 3561
- ISSN
- 0018-9383
- Abstract
- The effect of annealing on solution-processed indium oxide (In2O3) films was investigated under ambient air and wet conditions at 250 degrees C, 300 degrees C, and 350 degrees C, respectively. The air-annealed films exhibited excellent thin-film transistor characteristics including field-effect mobility of 0.11-3.53 cm(2)/Vs and subthreshold slope of 0.28-0.36 V/dec. Whereas the wet-annealed films showed a conductor-like behavior due to >100 times higher carrier concentration than the air-annealed films. The results of X-ray photoelectron spectroscopy supported the decrease of hydroxyl groups in the In2O3 films by wetannealing, reducing their electron trap states and leading to more charge carriers.
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Collections - Graduate School > Department of Applied Physics > 1. Journal Articles
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