Analysis of aluminum back surface field at different wafer specifications in crystalline silicon solar cells
- Authors
- Park, Sungeun; Park, Hyomin; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan
- Issue Date
- 9월-2016
- Publisher
- ELSEVIER
- Keywords
- Metallization; Screen printing; Wafer resistivity; Al back contact; Solar cells
- Citation
- CURRENT APPLIED PHYSICS, v.16, no.9, pp.1062 - 1068
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 16
- Number
- 9
- Start Page
- 1062
- End Page
- 1068
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/87730
- DOI
- 10.1016/j.cap.2016.05.016
- ISSN
- 1567-1739
- Abstract
- The purpose of this work is to investigate a back surface field (BSF) at a number of wafer resistivities for industrial crystalline silicon solar cells. As indicated in this manuscript, doping a crucible-grown Czochralski (Cz)-Si ingot with Ga offers a sure way of eliminating light-induced degradation (LID) because LID is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation in the Ga-doped Cz-Si ingot. This resistivity variation in a Cz-Si wafer at different locations varies the performance, as is already known. In the light of a B-doped wafer, we made wider resistivity in Si ingot; we investigated how resistivities affect the solar cell performance as a function of BSF quality. (C) 2016 Elsevier B.V. All rights reserved.
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Collections - Graduate School of Energy and Environment (KU-KIST GREEN SCHOOL) > Department of Energy and Environment > 1. Journal Articles
- College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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