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Effect of CO2 Laser on SiNx Films Fabricated by Low-Temperature Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

Authors
Choi, Jung A.Lee, Ho-NyunCho, Kwan HyunLee, Seung-WooJu, Byeong-KwonKang, Kyung Tae
Issue Date
Jul-2016
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
Flexible; CO2 Laser Irradiation; Laser-Assisted Plasma Enhanced Chemical Vapor Deposition (LAPECVD); Organic Light-Emitting Diodes (OLEDs); Barrier Film
Citation
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v.8, no.7, pp.549 - 554
Indexed
SCIE
SCOPUS
Journal Title
NANOSCIENCE AND NANOTECHNOLOGY LETTERS
Volume
8
Number
7
Start Page
549
End Page
554
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/88114
DOI
10.1166/nnl.2016.2228
ISSN
1941-4900
Abstract
The fabrication of effective inorganic barrier films using low-temperature processes has become an important issue in the field of flexible electronics. In this study, we investigate the characteristics of SiNx films produced by CO2 laser-assisted plasma-enhanced chemical vapor deposition at low temperature. From measurements of the thickness, surface topography, etch rate, and refractive indices, we demonstrate the enhanced quality of SiNx films fabricated by CO2 laser irradiation. Furthermore, we show that the CO2 laser irradiation is more effective on small samples, and that its effect also relies on types of substrate because their thermal conductivities affect the spread of heat originating from the CO2 laser irradiation. From the results presented here, appropriate CO2 laser configurations, selected according to the type and size of substrate, are shown to enhance the quality of SiNx films.
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