Optical and electrical properties of ZnO nanocrystal thin films passivated by atomic layer deposited Al2O3
- Authors
- Choi, Ji-Hyuk; Kim, Jungwoo; Oh, Soong Ju; Kim, Daekyoung; Kim, Yong-Hoon; Chae, Heeyeop; Kim, Hyoungsub
- Issue Date
- 7월-2016
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- electrical/electronic materials; nanostructured materials; chemical synthesis; doping; surface passivation
- Citation
- METALS AND MATERIALS INTERNATIONAL, v.22, no.4, pp.723 - 729
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- METALS AND MATERIALS INTERNATIONAL
- Volume
- 22
- Number
- 4
- Start Page
- 723
- End Page
- 729
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/88159
- DOI
- 10.1007/s12540-016-5692-7
- ISSN
- 1598-9623
- Abstract
- While colloidal semiconductor nanocrystal (NC) is preferred for use in solution-based optoelectronic devices, the large number of surface defects associated with its high surface-to-volume ratio degrades the optimal performance of NC-based devices due to the extensive trapping of free carriers available for charge transport. Here, we studied a simple and effective strategy to control the degree of passivation and doping level of solution-deposited ZnO NC films by infilling with ultra-thin Al2O3 using an atomic layer deposition (ALD) technique. According to various spectroscopic, microstructural, and electrical analyses, the ALD-Al2O3 treatment dramatically reduced the number of surface trap states with high ambient stability while simultaneously supplied excess carriers probably via a remote doping mechanism. As a consequence, the field-effect transistors built using the ZnO NC films with ALD-Al2O3 treatment for an optimal number of cycles exhibited significantly enhanced charge transport.
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