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A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

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dc.contributor.authorJo, Seo-Hyeon-
dc.contributor.authorKang, Dong-Ho-
dc.contributor.authorShim, Jaewoo-
dc.contributor.authorJeon, Jaeho-
dc.contributor.authorJeon, Min Hwan-
dc.contributor.authorYoo, Gwangwe-
dc.contributor.authorKim, Jinok-
dc.contributor.authorLee, Jaehyeong-
dc.contributor.authorYeom, Geun Young-
dc.contributor.authorLee, Sungjoo-
dc.contributor.authorYu, Hyun-Yong-
dc.contributor.authorChoi, Changhwan-
dc.contributor.authorPark, Jin-Hong-
dc.date.accessioned2021-09-03T22:44:07Z-
dc.date.available2021-09-03T22:44:07Z-
dc.date.created2021-06-18-
dc.date.issued2016-06-22-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/88312-
dc.description.abstractThe effects of triphenylphosphine (PPh3)-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2) photodetector are systematically studied, and a very high performance WSe2/h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 x 10(6) A W-1) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectMONOLAYER MOS2-
dc.subjectWSE2-
dc.subjectGRAPHENE-
dc.subjectPHOTORESPONSE-
dc.subjectGROWTH-
dc.subjectMONO-
dc.titleA High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique-
dc.typeArticle-
dc.contributor.affiliatedAuthorYu, Hyun-Yong-
dc.identifier.doi10.1002/adma.201600032-
dc.identifier.scopusid2-s2.0-84975074988-
dc.identifier.wosid000378939200005-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.28, no.24, pp.4824 - 4831-
dc.relation.isPartOfADVANCED MATERIALS-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume28-
dc.citation.number24-
dc.citation.startPage4824-
dc.citation.endPage4831-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusWSE2-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusPHOTORESPONSE-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusMONO-
dc.subject.keywordAuthornondegenerate doping-
dc.subject.keywordAuthorphotodetectors-
dc.subject.keywordAuthorPPh3-
dc.subject.keywordAuthortype-converted FET-
dc.subject.keywordAuthorWSe2-
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