Defect-engineered graphene chemical sensors with ultrahigh sensitivity
- Authors
- Lee, Geonyeop; Yang, Gwangseok; Cho, Ara; Han, Jeong Woo; Kim, Jihyun
- Issue Date
- 7-6월-2016
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.18, no.21, pp.14198 - 14204
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Volume
- 18
- Number
- 21
- Start Page
- 14198
- End Page
- 14204
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/88355
- DOI
- 10.1039/c5cp04422g
- ISSN
- 1463-9076
- Abstract
- We report defect-engineered graphene chemical sensors with ultrahigh sensitivity (e.g., 33% improvement in NO2 sensing and 614% improvement in NH3 sensing). A conventional reactive ion etching system was used to introduce the defects in a controlled manner. The sensitivity of graphene-based chemical sensors increased with increasing defect density until the vacancy-dominant region was reached. In addition, the mechanism of gas sensing was systematically investigated via experiments and density functional theory calculations, which indicated that the vacancy defect is a major contributing factor to the enhanced sensitivity. This study revealed that defect engineering in graphene has significant potential for fabricating ultra-sensitive graphene chemical sensors.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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