Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics
- Authors
- Jang, Jin Nyoung; Lee, You Jong; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo
- Issue Date
- 2-6월-2016
- Publisher
- IOP PUBLISHING LTD
- Keywords
- magnetic field shielded sputtering; nanocrystal embedded amorphous phase; transparent conductive oxide; room temperature process; indium tin oxide; gas barrier
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.49, no.21
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Volume
- 49
- Number
- 21
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/88369
- DOI
- 10.1088/0022-3727/49/21/215303
- ISSN
- 0022-3727
- Abstract
- In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.
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Collections - Graduate School > Department of Applied Physics > 1. Journal Articles
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