Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET
- Authors
- Ahn, Juhan; Kim, Jeong-Kyu; Kim, Sun-Woo; Kim, Gwang-Sik; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung Jin; Yu, Hyun-Yong
- Issue Date
- 6월-2016
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- CMOS; FinFET; germanium; interlayer; specific contact resistivity; tantalum nitride; variation; workfunction; zinc oxide
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.705 - 708
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 37
- Number
- 6
- Start Page
- 705
- End Page
- 708
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/88394
- DOI
- 10.1109/LED.2016.2553132
- ISSN
- 0741-3106
- Abstract
- A metal nitride-interlayer-semiconductor source/drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (rho(c)) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n(+)-IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n(+)-IL generate much lower rho(c) values (i.e., similar to 2 x 10(-9) Omega . cm(2)) and are less prone to variation. In addition, the impact of rho(c) variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n(+)-IL can achieve much lower current variation and a higher ON-state drive current.
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