Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Film Using Various p-Type Dopants and Its Application to GaN-Based Light-Emitting Diodes
- Authors
- Lee, Byeong Ryong; Kim, Tae Geun
- Issue Date
- 6월-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- RGO/SWNTs; PEDOT:PSS; p-GaN; MoO3; AuCl3; Dip-Coating Methods
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.6, pp.6203 - 6208
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 6
- Start Page
- 6203
- End Page
- 6208
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/88475
- DOI
- 10.1166/jnn.2016.12834
- ISSN
- 1533-4880
- Abstract
- This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films using various p-type dopants and its application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (Phi) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT: PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.
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