The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Taeho | - |
dc.contributor.author | Hur, Jihyun | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.date.accessioned | 2021-09-04T00:15:18Z | - |
dc.date.available | 2021-09-04T00:15:18Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/88818 | - |
dc.description.abstract | Defects in oxide semiconductors not only influence the initial device performance but also affect device reliability. The front channel is the major carrier transport region during the transistor turn-on stage, therefore an understanding of defects located in the vicinity of the interface is very important. In this study, we investigated the dynamics of charge transport in a nanocrystalline hafnium-indium-zinc-oxide thin-film transistor (TFT) by short pulse I-V, transient current and 1/f noise measurement methods. We found that the fast charging behavior of the tested device stems from defects located in both the front channel and the interface, following a multi-trapping mechanism. We found that a silicon-nitride stacked hafnium-indium-zinc-oxide TFT is vulnerable to interfacial charge trapping compared with silicon-oxide counterpart, causing significant mobility degradation and threshold voltage instability. The 1/f noise measurement data indicate that the carrier transport in a silicon-nitride stacked TFT device is governed by trapping/de-trapping processes via defects in the interface, while the silicon-oxide device follows the mobility fluctuation model. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | D-V-G | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | G METHODOLOGY | - |
dc.subject | PERFORMANCE | - |
dc.subject | TECHNOLOGY | - |
dc.subject | MOBILITY | - |
dc.subject | HYDROGEN | - |
dc.subject | NOISE | - |
dc.subject | DISPLAYS | - |
dc.subject | VOLTAGE | - |
dc.title | The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1088/0268-1242/31/5/055014 | - |
dc.identifier.scopusid | 2-s2.0-84963851459 | - |
dc.identifier.wosid | 000375570500016 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 31 | - |
dc.citation.number | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | D-V-G | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | G METHODOLOGY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | NOISE | - |
dc.subject.keywordPlus | DISPLAYS | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordAuthor | charge transport | - |
dc.subject.keywordAuthor | oxide semiconductor | - |
dc.subject.keywordAuthor | nanocrystal | - |
dc.subject.keywordAuthor | thin film transistor | - |
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