The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors
- Authors
- Kim, Taeho; Hur, Jihyun; Jeon, Sanghun
- Issue Date
- 5월-2016
- Publisher
- IOP PUBLISHING LTD
- Keywords
- charge transport; oxide semiconductor; nanocrystal; thin film transistor
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 31
- Number
- 5
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/88818
- DOI
- 10.1088/0268-1242/31/5/055014
- ISSN
- 0268-1242
- Abstract
- Defects in oxide semiconductors not only influence the initial device performance but also affect device reliability. The front channel is the major carrier transport region during the transistor turn-on stage, therefore an understanding of defects located in the vicinity of the interface is very important. In this study, we investigated the dynamics of charge transport in a nanocrystalline hafnium-indium-zinc-oxide thin-film transistor (TFT) by short pulse I-V, transient current and 1/f noise measurement methods. We found that the fast charging behavior of the tested device stems from defects located in both the front channel and the interface, following a multi-trapping mechanism. We found that a silicon-nitride stacked hafnium-indium-zinc-oxide TFT is vulnerable to interfacial charge trapping compared with silicon-oxide counterpart, causing significant mobility degradation and threshold voltage instability. The 1/f noise measurement data indicate that the carrier transport in a silicon-nitride stacked TFT device is governed by trapping/de-trapping processes via defects in the interface, while the silicon-oxide device follows the mobility fluctuation model.
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Collections - College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles
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