Exploiting the colloidal nanocrystal library to construct electronic devices
- Authors
- Choi, Ji-Hyuk; Wang, Han; Oh, Soong Ju; Paik, Taejong; Jo, Pil Sung; Sung, Jinwoo; Ye, Xingchen; Zhao, Tianshuo; Diroll, Benjamin T.; Murray, Christopher B.; Kagan, Cherie R.
- Issue Date
- 8-4월-2016
- Publisher
- AMER ASSOC ADVANCEMENT SCIENCE
- Citation
- SCIENCE, v.352, no.6282, pp.205 - 208
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENCE
- Volume
- 352
- Number
- 6282
- Start Page
- 205
- End Page
- 208
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/88931
- DOI
- 10.1126/science.aad0371
- ISSN
- 0036-8075
- Abstract
- Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors. Insulating aluminum oxide nanocrystals are assembled layer by layer with polyelectrolytes to form high-dielectric constant gate insulator layers for low-voltage device operation. Metallic indium nanocrystals are codispersed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to passivate and dope the cadmiumselenide nanocrystal channel layer. We fabricate all-nanocrystal field-effect transistors on flexible plastics with electron mobilities of 21.7 square centimeters per volt-second.
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- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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