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Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots
- Authors
- Kim, Ho Sung; Park, Min Su; Kim, Sang Hyeon; Park, Suk In; Song, Jin Dong; Kim, Sang Hyuck; Choi, Won Jun; Park, Jung Ho
- Issue Date
- 1-4월-2016
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Indiun tin oxide; Gallium Arsenide; Schottky barrier; Indium Arsenide; Quantum dots; Solar cells
- Citation
- THIN SOLID FILMS, v.604, pp.81 - 84
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 604
- Start Page
- 81
- End Page
- 84
- ISSN
- 0040-6090
- Abstract
- We report the electrical and optical characteristics of indium-tin-oxide (ITO)/GaAs Schottky barrier solar cells (SBSCs) with embedded InAs quantum dots (QDs). Twenty layers of self-assembled InAs QDs are inserted into the SBSCs so as to increase the potential barrier height at the ITO/GaAs junctions and to create additional photo-generated electrons in the quantum confined states of the QDs. After analyzing the current density-voltage characteristics, the photoluminescence, and the external quantum efficiency of the fabricated SBSCs, it was found that the incorporation of InAs QDs into the ITO/GaAs SBSCs results in an increase of both of the open-circuit voltage and the short-circuit current density compared to SBSCs without InAs QDs. (C) 2016 Elsevier B.V. All rights reserved.
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