Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seung-Hwan | - |
dc.contributor.author | Kim, Gwang-Sik | - |
dc.contributor.author | Kim, Sun-Woo | - |
dc.contributor.author | Kim, Jeong-Kyu | - |
dc.contributor.author | Choi, Changhwan | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.contributor.author | Choi, Rino | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2021-09-04T01:07:20Z | - |
dc.date.available | 2021-09-04T01:07:20Z | - |
dc.date.created | 2021-06-17 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/89086 | - |
dc.description.abstract | We demonstrate the effect of SF6 plasma passivation with a ZnO interlayer in a metal-interlayer-semiconductor (MIS) structure to reduce source/drain (S/D) contact resistance. The interface trap states and the metal-induced gap states causing the Fermi-level pinning problem are effectively alleviated by passivating the GaAs surface with SF6 plasma treatment and inserting a thin ZnO interlayer, respectively. Specific contact resistivity exhibits similar to 10(4) x reduction when the GaAs surface is treated with SF6 plasma, followed by ZnO interlayer deposition, compared with the Ti/n-GaAs (similar to 2x10(18) cm(-3)) S/D contact. This result proposes the promising non-alloyed S/D ohmic contact for III-V semiconductor-based transistors. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | SOURCE/DRAIN | - |
dc.subject | PASSIVATION | - |
dc.subject | SURFACE | - |
dc.title | Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1109/LED.2016.2524470 | - |
dc.identifier.scopusid | 2-s2.0-84963851081 | - |
dc.identifier.wosid | 000373129300005 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.37, no.4, pp.373 - 376 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 37 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 373 | - |
dc.citation.endPage | 376 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | SOURCE/DRAIN | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordAuthor | Contact resistance | - |
dc.subject.keywordAuthor | Fermi-level unpinning | - |
dc.subject.keywordAuthor | gallium arsenide | - |
dc.subject.keywordAuthor | SF6 plasma | - |
dc.subject.keywordAuthor | passivation | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.