A tantalum diffusion barrier layer for improving the output performance of AlGaInP-based light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Kim, Dae-Hyun | - |
dc.contributor.author | Park, Jae-Seong | - |
dc.contributor.author | Kang, Daesung | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-04T01:59:36Z | - |
dc.date.available | 2021-09-04T01:59:36Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/89275 | - |
dc.description.abstract | We have investigated the effect of a Ta diffusion barrier layer on the electrical characteristics of AuBe/Au contacts on a p-GaP window layer for AlGaInP-based light-emitting diodes (LEDs). It was shown that after annealing at 500 degrees C, the AuBe/Ta/Au contacts exhibited nearly 2 orders of magnitude lower specific contact resistance (2.8 x 10(-6) Omega cm(2)) than the AuBe/Au contacts (1.0 x 10(-4) Omega cm(2)). The LEDs with and without the Ta diffusion barrier layer showed an external quantum efficiency of 14.03 and 13.5% at 50 mA, respectively. After annealing at 500 degrees C, the AuBe/Ta/Au contacts showed a higher reflectance (92.8% at 617 nm) than that of the AuBe/Au contacts (87.7%). X-ray photoemission spectroscopy (XPS) results showed that the Ga 2p core level for the annealed AuBe/Au samples shifted to higher binding energies, while this level shifted towards lower binding energies for the AuBe/Ta/Au samples. Depth profiles using Auger electron spectroscopy (AES) showed that annealing of the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, while for the AuBe/Ta/Au samples, the outdiffusion of Be atoms was blocked by the Ta barrier layer and more Be atoms were indiffused into GaP. The annealing-induced electrical degradation and ohmic contact formation are described and discussed based on the XPS and electrical results. (C) 2016 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | P-TYPE GAP | - |
dc.subject | OHMIC CONTACT STRUCTURE | - |
dc.subject | CURRENT-SPREADING LAYER | - |
dc.subject | TIN-OXIDE ITO | - |
dc.subject | HEAT-TREATMENT | - |
dc.subject | GROWN GAP | - |
dc.subject | LEDS | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | SURFACE | - |
dc.subject | REFLECTOR | - |
dc.title | A tantalum diffusion barrier layer for improving the output performance of AlGaInP-based light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.7567/JJAP.55.032102 | - |
dc.identifier.scopusid | 2-s2.0-84962004132 | - |
dc.identifier.wosid | 000370491100019 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.3 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 55 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | P-TYPE GAP | - |
dc.subject.keywordPlus | OHMIC CONTACT STRUCTURE | - |
dc.subject.keywordPlus | CURRENT-SPREADING LAYER | - |
dc.subject.keywordPlus | TIN-OXIDE ITO | - |
dc.subject.keywordPlus | HEAT-TREATMENT | - |
dc.subject.keywordPlus | GROWN GAP | - |
dc.subject.keywordPlus | LEDS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | REFLECTOR | - |
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