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A tantalum diffusion barrier layer for improving the output performance of AlGaInP-based light-emitting diodes

Authors
Kim, Dae-HyunPark, Jae-SeongKang, DaesungSeong, Tae-Yeon
Issue Date
3월-2016
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.3
Indexed
SCIE
SCOPUS
Journal Title
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume
55
Number
3
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/89275
DOI
10.7567/JJAP.55.032102
ISSN
0021-4922
Abstract
We have investigated the effect of a Ta diffusion barrier layer on the electrical characteristics of AuBe/Au contacts on a p-GaP window layer for AlGaInP-based light-emitting diodes (LEDs). It was shown that after annealing at 500 degrees C, the AuBe/Ta/Au contacts exhibited nearly 2 orders of magnitude lower specific contact resistance (2.8 x 10(-6) Omega cm(2)) than the AuBe/Au contacts (1.0 x 10(-4) Omega cm(2)). The LEDs with and without the Ta diffusion barrier layer showed an external quantum efficiency of 14.03 and 13.5% at 50 mA, respectively. After annealing at 500 degrees C, the AuBe/Ta/Au contacts showed a higher reflectance (92.8% at 617 nm) than that of the AuBe/Au contacts (87.7%). X-ray photoemission spectroscopy (XPS) results showed that the Ga 2p core level for the annealed AuBe/Au samples shifted to higher binding energies, while this level shifted towards lower binding energies for the AuBe/Ta/Au samples. Depth profiles using Auger electron spectroscopy (AES) showed that annealing of the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, while for the AuBe/Ta/Au samples, the outdiffusion of Be atoms was blocked by the Ta barrier layer and more Be atoms were indiffused into GaP. The annealing-induced electrical degradation and ohmic contact formation are described and discussed based on the XPS and electrical results. (C) 2016 The Japan Society of Applied Physics
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SEONG, TAE YEON
공과대학 (신소재공학부)
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