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Quantum interference effects in chemical vapor deposited graphene

Authors
Kim, Nam-HeeShin, Yun-SokPark, SerinKim, Hong-SeokLee, Jun SungAhn, Chi WonLee, Jeong-ODoh, Yong-Joo
Issue Date
1월-2016
Publisher
ELSEVIER
Keywords
Graphene; Weak (anti) localization; Universal conductance fluctuations; Quantum interference
Citation
CURRENT APPLIED PHYSICS, v.16, no.1, pp.31 - 36
Indexed
SCIE
SCOPUS
KCI
Journal Title
CURRENT APPLIED PHYSICS
Volume
16
Number
1
Start Page
31
End Page
36
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/89875
DOI
10.1016/j.cap.2015.10.007
ISSN
1567-1739
Abstract
We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the microporeformed graphene sample. These extensive temperature- and gate-dependent measurements of the intervalley and intravalley scattering lengths provide important and useful insight for the macroscopic applications of graphene-based quantum devices. (C) 2015 Elsevier B.V. All rights reserved.
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College of Science and Technology > Semiconductor Physics in Division of Display and Semiconductor Physics > 1. Journal Articles
Graduate School > Department of Applied Physics > 1. Journal Articles

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