Quantum interference effects in chemical vapor deposited graphene
- Authors
- Kim, Nam-Hee; Shin, Yun-Sok; Park, Serin; Kim, Hong-Seok; Lee, Jun Sung; Ahn, Chi Won; Lee, Jeong-O; Doh, Yong-Joo
- Issue Date
- 1월-2016
- Publisher
- ELSEVIER
- Keywords
- Graphene; Weak (anti) localization; Universal conductance fluctuations; Quantum interference
- Citation
- CURRENT APPLIED PHYSICS, v.16, no.1, pp.31 - 36
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 16
- Number
- 1
- Start Page
- 31
- End Page
- 36
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/89875
- DOI
- 10.1016/j.cap.2015.10.007
- ISSN
- 1567-1739
- Abstract
- We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the microporeformed graphene sample. These extensive temperature- and gate-dependent measurements of the intervalley and intravalley scattering lengths provide important and useful insight for the macroscopic applications of graphene-based quantum devices. (C) 2015 Elsevier B.V. All rights reserved.
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- Appears in
Collections - College of Science and Technology > Semiconductor Physics in Division of Display and Semiconductor Physics > 1. Journal Articles
- Graduate School > Department of Applied Physics > 1. Journal Articles
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