Thermally Stable AuBe-based Ohmic Contacts to p-type GaP for AlGaInP-based Light-emitting Diode by Using a Tungsten Barrier Layer
- Authors
- Kim, Dae-Hyun; Kang, Daesung; Park, Jae-Seong; Seong, Tae-Yeon
- Issue Date
- Jan-2016
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Contact; GaP; Light-emitting diodes; W diffusion barrier; AuBe
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.68, no.2, pp.306 - 310
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 68
- Number
- 2
- Start Page
- 306
- End Page
- 310
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/90037
- DOI
- 10.3938/jkps.68.306
- ISSN
- 0374-4884
- Abstract
- We investigated how a tungsten diffusion barrier layer affected the electrical properties of AuBe/Au contacts to a p-GaP window layer (na = 5 x 10 19 cm(-3)) for an AlGaInP-based light emitting diode. All of the as-deposited samples were ohmic. After annealing at 500. C, the AuBe/Au contacts were electrically degraded with a specific contact resistivity of 1.0 x 10(-4) Omega cm(2). However, the electrical properties of the W-based contacts were improved, having a contact resistivity of 5.0 x 10(-6) Omega cm(2). The X-ray photoemission spectroscopy (XPS) results showed that the Ga 2p core level for the annealed AuBe/Au contacts shifted to the high binding-energy side. On the other hand, that for the AuBe/W/Au contacts shifted toward the lower binding-energy side. For the AuBe/Au contacts, both Be and P atoms were shown to be outdiffused into the metal contact after annealing. However, for the AuBe/W/Au contacts, the outdiffusion of Be atoms was prevented by the W barrier layer, and the Be atoms were indiffused into GaP. Based on the X-ray photoemission spectroscopy (XPS), Auger electron spectroscopy (AES), and electrical results, the annealing-induced electrical degradation and improvement are described and discussed.
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