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Improvement of uniformity in chemical vapor deposition of silicon carbide by using CFD
- Authors
- Seo, Jin-Won; Kim, Jun-Woo; Choi, Kyoon; Lee, Jong-Heun
- Issue Date
- 1월-2016
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Computational fluid dynamics (CFD); Chemical vapor deposition (CVD); Silicon carbide; Hard coating
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.68, no.1, pp.170 - 175
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 68
- Number
- 1
- Start Page
- 170
- End Page
- 175
- ISSN
- 0374-4884
- Abstract
- The chemical vapor deposition (CVD) of silicon carbide (SiC) on carbon has been widely used as a general method to suppress dust generation on carbon surfaces. For a CH3SiCl3 (MTS) and hydrogen system, computational fluid dynamic simulations to predict the growth rate of the silicon carbide are performed. The results of the simulations are consistent with the experimental results where the deposition rate depends highly on the H/Si composition and the specimen's location. This simulation can provide guidance in optimizing the CVD process and improving the apparatus for CVD of SiC.
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