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High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative

Authors
Um, Hyun AhLee, Ji HyungBaik, HionsuckCho, Min JuChoi, Dong Hoon
Issue Date
2016
Publisher
ROYAL SOC CHEMISTRY
Citation
CHEMICAL COMMUNICATIONS, v.52, no.88, pp.13012 - 13015
Indexed
SCIE
SCOPUS
Journal Title
CHEMICAL COMMUNICATIONS
Volume
52
Number
88
Start Page
13012
End Page
13015
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/90212
DOI
10.1039/c6cc06550c
ISSN
1359-7345
Abstract
We propose a novel tricyanovinyldihydrofuran (TCF)-based molecule called DBOB-DTCF that is designed and synthesized for application in n-type field-effect transistors (FETs). It can be operated in a stable manner under ambient conditions. DBOB-DTCF is successfully fabricated as crystalline microplates (CMs) because of its capability of self-assembly. A high electron mobility of similar to 1.9 cm(2) V-1 s(-1) is observed for a CM-based FET, measured under ambient conditions. This suggests that TCF is an excellent acceptor unit that organizes air stable n-type organic semiconductors.
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