High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative
- Authors
- Um, Hyun Ah; Lee, Ji Hyung; Baik, Hionsuck; Cho, Min Ju; Choi, Dong Hoon
- Issue Date
- 2016
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- CHEMICAL COMMUNICATIONS, v.52, no.88, pp.13012 - 13015
- Indexed
- SCIE
SCOPUS
- Journal Title
- CHEMICAL COMMUNICATIONS
- Volume
- 52
- Number
- 88
- Start Page
- 13012
- End Page
- 13015
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/90212
- DOI
- 10.1039/c6cc06550c
- ISSN
- 1359-7345
- Abstract
- We propose a novel tricyanovinyldihydrofuran (TCF)-based molecule called DBOB-DTCF that is designed and synthesized for application in n-type field-effect transistors (FETs). It can be operated in a stable manner under ambient conditions. DBOB-DTCF is successfully fabricated as crystalline microplates (CMs) because of its capability of self-assembly. A high electron mobility of similar to 1.9 cm(2) V-1 s(-1) is observed for a CM-based FET, measured under ambient conditions. This suggests that TCF is an excellent acceptor unit that organizes air stable n-type organic semiconductors.
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