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Memory Interfaces: Past, Present, and Future

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dc.contributor.authorKim, C.-
dc.contributor.authorLee, H.-W.-
dc.contributor.authorSong, J.-
dc.date.accessioned2021-09-04T08:48:03Z-
dc.date.available2021-09-04T08:48:03Z-
dc.date.created2021-06-17-
dc.date.issued2016-
dc.identifier.issn1943-0582-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/91360-
dc.description.abstractOver the last few decades, the bandwidth of dynamic random-access memory (DRAM) has increased significantly through innovative architectures and circuit-level techniques to overcome the well-known memory wall problem. We can understand the past challenges of DRAM input/output (I/O) by investigating the technologies utilized for DRAM I/O in the transition from single-data-rate (SDR) synchronous DRAM (SDRAM)to double-data-rate (DDR) SDRAM. Recently developed versions of low-power DDR four (LPDDR4) and synchronous graphics DDR five (GDDR5) employ new I/O features for further bandwidth increase. Looking beyond LPDDR4 and GDDR5, what should be done to make another jump in bandwidth increase for DRAM? © 2016 IEEE.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.subjectBandwidth-
dc.subjectRandom access storage-
dc.subjectCircuit levels-
dc.subjectData rates-
dc.subjectDouble data rate-
dc.subjectDynamic random access memory-
dc.subjectInput/output-
dc.subjectMemory interface-
dc.subjectMemory wall-
dc.subjectSynchronous drams-
dc.subjectDynamic random access storage-
dc.titleMemory Interfaces: Past, Present, and Future-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, C.-
dc.identifier.doi10.1109/MSSC.2016.2546659-
dc.identifier.scopusid2-s2.0-84976631779-
dc.identifier.bibliographicCitationIEEE Solid-State Circuits Magazine, v.8, no.2, pp.23 - 34-
dc.relation.isPartOfIEEE Solid-State Circuits Magazine-
dc.citation.titleIEEE Solid-State Circuits Magazine-
dc.citation.volume8-
dc.citation.number2-
dc.citation.startPage23-
dc.citation.endPage34-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusBandwidth-
dc.subject.keywordPlusRandom access storage-
dc.subject.keywordPlusCircuit levels-
dc.subject.keywordPlusData rates-
dc.subject.keywordPlusDouble data rate-
dc.subject.keywordPlusDynamic random access memory-
dc.subject.keywordPlusInput/output-
dc.subject.keywordPlusMemory interface-
dc.subject.keywordPlusMemory wall-
dc.subject.keywordPlusSynchronous drams-
dc.subject.keywordPlusDynamic random access storage-
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