Unconventional but tunable phase transition above the percolation threshold by two-layer conduction in electroless-deposited Au nanofeatures on silicon substrate
DC Field | Value | Language |
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dc.contributor.author | Lee, Seung-Hoon | - |
dc.contributor.author | Shin, Muncheol | - |
dc.contributor.author | Hwang, Seongpil | - |
dc.contributor.author | Jang, Jae-Won | - |
dc.date.accessioned | 2021-09-04T09:14:54Z | - |
dc.date.available | 2021-09-04T09:14:54Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-12-18 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/91557 | - |
dc.description.abstract | Previous research has shown that disorder, dislocation, and carrier concentration are the main factors impacting transitions in the traditional metal-insulator transition (MIT) and metal-semiconductor transition (MST). In this study, it is demonstrated that a non-traditional metal-semiconductor transition governed by two-layer conduction is possible by tuning the conducting channel of one layer of the two-layer conduction system. By means of the electroless deposition method we produced Au nanofeatures (AuNFs) on p-type silicon (p-Si) as the two-layer conduction system, controlling AuNF coverage (Au%) below and above the percolation threshold (pc). Even when the AuNF coverage percentage is larger than pc, the resistivities of the AuNFs on p-Si show MST as the temperature increases. To demonstrate this finding, we present a conduction model based upon two predominant parallel conductions by AuNFs and p-Si in the present paper. In the results, we show how the temperature of the MST (T-MST) is tuned from 145 to 232 K as Au% is changed from 82.7 to 54.3%. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | METAL-INSULATOR-TRANSITION | - |
dc.subject | GALVANIC DISPLACEMENT | - |
dc.subject | FILMS | - |
dc.subject | ULTRATHIN | - |
dc.subject | NANOSTRUCTURES | - |
dc.subject | RESISTIVITY | - |
dc.subject | NOISE | - |
dc.title | Unconventional but tunable phase transition above the percolation threshold by two-layer conduction in electroless-deposited Au nanofeatures on silicon substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, Seongpil | - |
dc.identifier.doi | 10.1088/0957-4484/26/50/505202 | - |
dc.identifier.scopusid | 2-s2.0-84948844133 | - |
dc.identifier.wosid | 000366717700006 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.26, no.50 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 26 | - |
dc.citation.number | 50 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | METAL-INSULATOR-TRANSITION | - |
dc.subject.keywordPlus | GALVANIC DISPLACEMENT | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | ULTRATHIN | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | RESISTIVITY | - |
dc.subject.keywordPlus | NOISE | - |
dc.subject.keywordAuthor | electroless deposition | - |
dc.subject.keywordAuthor | metal-semiconductor transition | - |
dc.subject.keywordAuthor | temperature-dependent resistivity | - |
dc.subject.keywordAuthor | two-layer model | - |
dc.subject.keywordAuthor | gold nanostructures | - |
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