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Unconventional but tunable phase transition above the percolation threshold by two-layer conduction in electroless-deposited Au nanofeatures on silicon substrate

Authors
Lee, Seung-HoonShin, MuncheolHwang, SeongpilJang, Jae-Won
Issue Date
18-12월-2015
Publisher
IOP PUBLISHING LTD
Keywords
electroless deposition; metal-semiconductor transition; temperature-dependent resistivity; two-layer model; gold nanostructures
Citation
NANOTECHNOLOGY, v.26, no.50
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
26
Number
50
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/91557
DOI
10.1088/0957-4484/26/50/505202
ISSN
0957-4484
Abstract
Previous research has shown that disorder, dislocation, and carrier concentration are the main factors impacting transitions in the traditional metal-insulator transition (MIT) and metal-semiconductor transition (MST). In this study, it is demonstrated that a non-traditional metal-semiconductor transition governed by two-layer conduction is possible by tuning the conducting channel of one layer of the two-layer conduction system. By means of the electroless deposition method we produced Au nanofeatures (AuNFs) on p-type silicon (p-Si) as the two-layer conduction system, controlling AuNF coverage (Au%) below and above the percolation threshold (pc). Even when the AuNF coverage percentage is larger than pc, the resistivities of the AuNFs on p-Si show MST as the temperature increases. To demonstrate this finding, we present a conduction model based upon two predominant parallel conductions by AuNFs and p-Si in the present paper. In the results, we show how the temperature of the MST (T-MST) is tuned from 145 to 232 K as Au% is changed from 82.7 to 54.3%.
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