Localized-surface-plasmon-enhanced multifunction silicon nanomembrane Schottky diodes based on Au nanoparticles
DC Field | Value | Language |
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dc.contributor.author | Ha, Hyeon Jun | - |
dc.contributor.author | Kang, Byung Hyun | - |
dc.contributor.author | Yeom, Seung-Won | - |
dc.contributor.author | Park, Junsu | - |
dc.contributor.author | Lee, Yun-Hi | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.date.accessioned | 2021-09-04T09:28:18Z | - |
dc.date.available | 2021-09-04T09:28:18Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-12-04 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/91608 | - |
dc.description.abstract | Au nanoparticle (NP)-modified Si nanomembrane (Si NM) Schottky barrier diodes (SBDs) were fabricated by using a transfer-printing method to create pedestals using only one photomask on a flexible substrate. The transfer using the pedestals afforded a yield of >95% with no significant cracks. The plasmonic Au NPs can facilitate the improvement of the incident optical absorption. The Au NP-modified Si NM SBD exhibited enhanced photoresponse characteristics with an external quantum efficiency (eta(EQE)) of 34%, a photosensitivity (P) of 27 at a voltage bias of -5 V, a light intensity of 1.2Wcm(-2), and a responsivity (R-ph) of 0.21 AW(-1). Additionally, the mechanical bending characteristics of the device were observed while a compressive strain up to 0.62% was applied to the diode. The results suggest that the Au NP-modified Si NM SBD has great potential for use in multifunction devices as a strain sensor and photosensor. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | GOLD | - |
dc.title | Localized-surface-plasmon-enhanced multifunction silicon nanomembrane Schottky diodes based on Au nanoparticles | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Yun-Hi | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.identifier.doi | 10.1088/0957-4484/26/48/485501 | - |
dc.identifier.scopusid | 2-s2.0-84947257531 | - |
dc.identifier.wosid | 000366681500008 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.26, no.48 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 26 | - |
dc.citation.number | 48 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GOLD | - |
dc.subject.keywordAuthor | localized surface plasmon | - |
dc.subject.keywordAuthor | Schottky barrier diode | - |
dc.subject.keywordAuthor | silicon nanomembrane | - |
dc.subject.keywordAuthor | Au nanoparticle | - |
dc.subject.keywordAuthor | photosensor | - |
dc.subject.keywordAuthor | strain sensor | - |
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