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Localized-surface-plasmon-enhanced multifunction silicon nanomembrane Schottky diodes based on Au nanoparticles

Authors
Ha, Hyeon JunKang, Byung HyunYeom, Seung-WonPark, JunsuLee, Yun-HiJu, Byeong-Kwon
Issue Date
4-12월-2015
Publisher
IOP PUBLISHING LTD
Keywords
localized surface plasmon; Schottky barrier diode; silicon nanomembrane; Au nanoparticle; photosensor; strain sensor
Citation
NANOTECHNOLOGY, v.26, no.48
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
26
Number
48
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/91608
DOI
10.1088/0957-4484/26/48/485501
ISSN
0957-4484
Abstract
Au nanoparticle (NP)-modified Si nanomembrane (Si NM) Schottky barrier diodes (SBDs) were fabricated by using a transfer-printing method to create pedestals using only one photomask on a flexible substrate. The transfer using the pedestals afforded a yield of >95% with no significant cracks. The plasmonic Au NPs can facilitate the improvement of the incident optical absorption. The Au NP-modified Si NM SBD exhibited enhanced photoresponse characteristics with an external quantum efficiency (eta(EQE)) of 34%, a photosensitivity (P) of 27 at a voltage bias of -5 V, a light intensity of 1.2Wcm(-2), and a responsivity (R-ph) of 0.21 AW(-1). Additionally, the mechanical bending characteristics of the device were observed while a compressive strain up to 0.62% was applied to the diode. The results suggest that the Au NP-modified Si NM SBD has great potential for use in multifunction devices as a strain sensor and photosensor.
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Ju, Byeong kwon
공과대학 (전기전자공학부)
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