Poly-Si TFTs with bottom-gate structure using excimer laser crystallisation for AMOLED displays
DC Field | Value | Language |
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dc.contributor.author | Oh, K. | - |
dc.contributor.author | Yang, S. | - |
dc.contributor.author | Lee, J. | - |
dc.contributor.author | Park, K. | - |
dc.contributor.author | Sung, M. Y. | - |
dc.date.accessioned | 2021-09-04T10:31:40Z | - |
dc.date.available | 2021-09-04T10:31:40Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-11-19 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/91880 | - |
dc.description.abstract | An n-type polycrystalline silicon thin-film transistor (poly-Si TFT) with a bottom-gate structure using excimer laser annealing (ELA) for active matrix organic light-emitting diode displays is proposed. A problem with bottom-gate poly-Si TFTs (BGPs) using ELA, namely, the disconnection of poly-Si at the boundary of the gate metal during the ELA crystallisation, was solved by developing a novel process to control the slope of the gate metal. We realised ELA BGPs with pure-Mo gate having a thickness of more than 150 nm. The BGPs have better breakdown voltage characteristics compared with the conventional top-gate poly-Si TFTs because of its flat channel region and homogeneous electric field distribution in the gate insulator. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.subject | THIN-FILM-TRANSISTOR | - |
dc.title | Poly-Si TFTs with bottom-gate structure using excimer laser crystallisation for AMOLED displays | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, M. Y. | - |
dc.identifier.doi | 10.1049/el.2015.2422 | - |
dc.identifier.scopusid | 2-s2.0-84948415400 | - |
dc.identifier.wosid | 000365573200041 | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.51, no.24, pp.2030 - 2031 | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 51 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 2030 | - |
dc.citation.endPage | 2031 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | THIN-FILM-TRANSISTOR | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | excimer lasers | - |
dc.subject.keywordAuthor | laser beam annealing | - |
dc.subject.keywordAuthor | crystallisation | - |
dc.subject.keywordAuthor | organic light emitting diodes | - |
dc.subject.keywordAuthor | LED displays | - |
dc.subject.keywordAuthor | molybdenum | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | polysilicon TFT | - |
dc.subject.keywordAuthor | bottom-gate structure | - |
dc.subject.keywordAuthor | excimer laser annealing crystallisation | - |
dc.subject.keywordAuthor | AMOLED display | - |
dc.subject.keywordAuthor | n-type polycrystalline silicon thin-film transistor | - |
dc.subject.keywordAuthor | active matrix organic light-emitting diode display | - |
dc.subject.keywordAuthor | ELA BGP | - |
dc.subject.keywordAuthor | molybdenum | - |
dc.subject.keywordAuthor | breakdown voltage characteristic | - |
dc.subject.keywordAuthor | flat channel region | - |
dc.subject.keywordAuthor | homogeneous electric field distribution | - |
dc.subject.keywordAuthor | gate insulator | - |
dc.subject.keywordAuthor | Si | - |
dc.subject.keywordAuthor | Mo | - |
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