Poly-Si TFTs with bottom-gate structure using excimer laser crystallisation for AMOLED displays
- Authors
- Oh, K.; Yang, S.; Lee, J.; Park, K.; Sung, M. Y.
- Issue Date
- 19-11월-2015
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Keywords
- silicon; thin film transistors; excimer lasers; laser beam annealing; crystallisation; organic light emitting diodes; LED displays; molybdenum; elemental semiconductors; polysilicon TFT; bottom-gate structure; excimer laser annealing crystallisation; AMOLED display; n-type polycrystalline silicon thin-film transistor; active matrix organic light-emitting diode display; ELA BGP; molybdenum; breakdown voltage characteristic; flat channel region; homogeneous electric field distribution; gate insulator; Si; Mo
- Citation
- ELECTRONICS LETTERS, v.51, no.24, pp.2030 - 2031
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 51
- Number
- 24
- Start Page
- 2030
- End Page
- 2031
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/91880
- DOI
- 10.1049/el.2015.2422
- ISSN
- 0013-5194
- Abstract
- An n-type polycrystalline silicon thin-film transistor (poly-Si TFT) with a bottom-gate structure using excimer laser annealing (ELA) for active matrix organic light-emitting diode displays is proposed. A problem with bottom-gate poly-Si TFTs (BGPs) using ELA, namely, the disconnection of poly-Si at the boundary of the gate metal during the ELA crystallisation, was solved by developing a novel process to control the slope of the gate metal. We realised ELA BGPs with pure-Mo gate having a thickness of more than 150 nm. The BGPs have better breakdown voltage characteristics compared with the conventional top-gate poly-Si TFTs because of its flat channel region and homogeneous electric field distribution in the gate insulator.
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