Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing
DC Field | Value | Language |
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dc.contributor.author | Heo, Seung Chan | - |
dc.contributor.author | Lim, Donghwan | - |
dc.contributor.author | Jung, Woo Suk | - |
dc.contributor.author | Choi, Rino | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Choi, Changhwan | - |
dc.date.accessioned | 2021-09-04T10:48:59Z | - |
dc.date.available | 2021-09-04T10:48:59Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2015-11-01 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/91948 | - |
dc.description.abstract | Hydrogen (H-2) plasma treatment at the interface between 4H-SiC substrate and Al2O3 dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (D-it) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H-2 plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), D-it value more than 10(14) eV(-1) cm(-2) is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, D-it of the H-2 plasma treated device is significantly reduced to as low as 1.00 x 10(12) eV(-1) cm(-2) at E-c - E-t = 0.4 eV and is about five times lower than that of sample without H-2 plasma passivation (D-it = 4.84 x 10(12) eV(-1) cm(-2)). (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | INTERFACE | - |
dc.subject | MOBILITY | - |
dc.subject | OXIDES | - |
dc.subject | SIO2 | - |
dc.title | Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1016/j.mee.2015.04.059 | - |
dc.identifier.scopusid | 2-s2.0-84928817459 | - |
dc.identifier.wosid | 000362308000058 | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.147, pp.239 - 243 | - |
dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 147 | - |
dc.citation.startPage | 239 | - |
dc.citation.endPage | 243 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordPlus | SIO2 | - |
dc.subject.keywordAuthor | Plasma hydrogen passivation | - |
dc.subject.keywordAuthor | SiC | - |
dc.subject.keywordAuthor | Power device | - |
dc.subject.keywordAuthor | ALD Al2O3 | - |
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