Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, Chan-Hwa | - |
dc.contributor.author | Shin, Jae-Heon | - |
dc.contributor.author | Park, Nae-Man | - |
dc.contributor.author | Kim, Kyung-Hyun | - |
dc.contributor.author | Kim, Bo-Sul | - |
dc.contributor.author | Song, Chang-Woo | - |
dc.contributor.author | Yang, Ji-Woong | - |
dc.contributor.author | Seo, Woo-Hyung | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.contributor.author | Cheong, Woo-Seok | - |
dc.date.accessioned | 2021-09-04T11:55:13Z | - |
dc.date.available | 2021-09-04T11:55:13Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-10 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/92283 | - |
dc.description.abstract | In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | OXIDE THIN-FILMS | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | INDIUM | - |
dc.subject | DEPOSITION | - |
dc.subject | DC | - |
dc.subject | DEPENDENCE | - |
dc.subject | COATINGS | - |
dc.subject | OXYGEN | - |
dc.title | Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.identifier.doi | 10.1166/jnn.2015.11289 | - |
dc.identifier.scopusid | 2-s2.0-84947248278 | - |
dc.identifier.wosid | 000365554600125 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.10, pp.8099 - 8102 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 15 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 8099 | - |
dc.citation.endPage | 8102 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | OXIDE THIN-FILMS | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | INDIUM | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | DC | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | COATINGS | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordAuthor | TOO | - |
dc.subject.keywordAuthor | IPVD | - |
dc.subject.keywordAuthor | Ti-Doped ITO | - |
dc.subject.keywordAuthor | ICP | - |
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