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Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD
- Authors
- Hong, Chan-Hwa; Shin, Jae-Heon; Park, Nae-Man; Kim, Kyung-Hyun; Kim, Bo-Sul; Song, Chang-Woo; Yang, Ji-Woong; Seo, Woo-Hyung; Ju, Byeong-Kwon; Cheong, Woo-Seok
- Issue Date
- 10월-2015
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- TOO; IPVD; Ti-Doped ITO; ICP
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.10, pp.8099 - 8102
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 15
- Number
- 10
- Start Page
- 8099
- End Page
- 8102
- ISSN
- 1533-4880
- Abstract
- In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.
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