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Highly Transparent and Low-Resistance Indium-Free ZnO/Ag/ZnO Multilayer Electrodes for Organic Photovoltaic Devices

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dc.contributor.authorKim, Jun Ho-
dc.contributor.authorNa, Jin-Young-
dc.contributor.authorKim, Sun-Kyung-
dc.contributor.authorYoo, Young-Zo-
dc.contributor.authorSeong, Tae-Yeon-
dc.date.accessioned2021-09-04T11:57:19Z-
dc.date.available2021-09-04T11:57:19Z-
dc.date.created2021-06-18-
dc.date.issued2015-10-
dc.identifier.issn0361-5235-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/92298-
dc.description.abstractWe investigated the effect of ZnO layer thickness on the optical and electrical properties of ZnO/Ag/ZnO multilayer films deposited on glass substrates. The transmission window became wider and shifted toward the lower energy side with increasing ZnO thickness. The ZnO/Ag/ZnO (40 nm/18.8 nm/40 nm) multilayer sample showed transmittance of similar to 96% at 550nm. As the ZnO thickness was increased from 8 nm to 80 nm, the carrier concentration gradually decreased from 1.74 x 10(22) cm(-3) to 4.33 x 10(21) cm(-3), while the charge mobility varied from 23.8 cm(2)/V-s to 24.8 cm(2)/V-s. With increasing ZnO thickness, the samples exhibited similar sheet resistances of 3.6 Omega/sq to 3.9 Omega/sq, but the resistivity increased by a factor of 4.58. The samples showed smooth surfaces with root-mean-square roughness in the range of 0.47 nm to 0.94 nm. Haacke's figure of merit (FOM) was calculated for all the samples; the ZnO (40 nm)/Ag (18.8 nm)/ZnO (40 nm) multilayer produced the highest FOM of 148.9 x 10(-3) Omega(-1).-
dc.languageEnglish-
dc.language.isoen-
dc.publisherSPRINGER-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectTHIN-FILMS-
dc.subjectSTRUCTURAL-PROPERTIES-
dc.subjectCOMPOSITE ELECTRODE-
dc.subjectZNO-
dc.subjectOPTIMIZATION-
dc.subjectLAYER-
dc.subjectCONDUCTOR-
dc.subjectSUBSTRATE-
dc.subjectDESIGN-
dc.titleHighly Transparent and Low-Resistance Indium-Free ZnO/Ag/ZnO Multilayer Electrodes for Organic Photovoltaic Devices-
dc.typeArticle-
dc.contributor.affiliatedAuthorSeong, Tae-Yeon-
dc.identifier.doi10.1007/s11664-015-3811-8-
dc.identifier.scopusid2-s2.0-84940792898-
dc.identifier.wosid000360672900102-
dc.identifier.bibliographicCitationJOURNAL OF ELECTRONIC MATERIALS, v.44, no.10, pp.3967 - 3972-
dc.relation.isPartOfJOURNAL OF ELECTRONIC MATERIALS-
dc.citation.titleJOURNAL OF ELECTRONIC MATERIALS-
dc.citation.volume44-
dc.citation.number10-
dc.citation.startPage3967-
dc.citation.endPage3972-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusSTRUCTURAL-PROPERTIES-
dc.subject.keywordPlusCOMPOSITE ELECTRODE-
dc.subject.keywordPlusZNO-
dc.subject.keywordPlusOPTIMIZATION-
dc.subject.keywordPlusLAYER-
dc.subject.keywordPlusCONDUCTOR-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusDESIGN-
dc.subject.keywordAuthorZnO-
dc.subject.keywordAuthorAg-
dc.subject.keywordAuthormultilayer-
dc.subject.keywordAuthortransparent conducting electrode-
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SEONG, TAE YEON
공과대학 (신소재공학부)
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