Highly Transparent and Low-Resistance Indium-Free ZnO/Ag/ZnO Multilayer Electrodes for Organic Photovoltaic Devices
- Authors
- Kim, Jun Ho; Na, Jin-Young; Kim, Sun-Kyung; Yoo, Young-Zo; Seong, Tae-Yeon
- Issue Date
- 10월-2015
- Publisher
- SPRINGER
- Keywords
- ZnO; Ag; multilayer; transparent conducting electrode
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.44, no.10, pp.3967 - 3972
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 44
- Number
- 10
- Start Page
- 3967
- End Page
- 3972
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/92298
- DOI
- 10.1007/s11664-015-3811-8
- ISSN
- 0361-5235
- Abstract
- We investigated the effect of ZnO layer thickness on the optical and electrical properties of ZnO/Ag/ZnO multilayer films deposited on glass substrates. The transmission window became wider and shifted toward the lower energy side with increasing ZnO thickness. The ZnO/Ag/ZnO (40 nm/18.8 nm/40 nm) multilayer sample showed transmittance of similar to 96% at 550nm. As the ZnO thickness was increased from 8 nm to 80 nm, the carrier concentration gradually decreased from 1.74 x 10(22) cm(-3) to 4.33 x 10(21) cm(-3), while the charge mobility varied from 23.8 cm(2)/V-s to 24.8 cm(2)/V-s. With increasing ZnO thickness, the samples exhibited similar sheet resistances of 3.6 Omega/sq to 3.9 Omega/sq, but the resistivity increased by a factor of 4.58. The samples showed smooth surfaces with root-mean-square roughness in the range of 0.47 nm to 0.94 nm. Haacke's figure of merit (FOM) was calculated for all the samples; the ZnO (40 nm)/Ag (18.8 nm)/ZnO (40 nm) multilayer produced the highest FOM of 148.9 x 10(-3) Omega(-1).
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