A D-Band Integrated Signal Source Based on SiGe 0.18 mu m BiCMOS Technology
DC Field | Value | Language |
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dc.contributor.author | Jung, Seungyoon | - |
dc.contributor.author | Yun, Jongwon | - |
dc.contributor.author | Rieh, Jae-Sung | - |
dc.date.accessioned | 2021-09-04T12:01:15Z | - |
dc.date.available | 2021-09-04T12:01:15Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-10 | - |
dc.identifier.issn | 2234-8409 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/92329 | - |
dc.description.abstract | This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is 900 x 1,890 mu m(2), including RF and DC pads. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST ELECTROMAGNETIC ENGINEERING & SCIENCE | - |
dc.subject | OUTPUT POWER | - |
dc.subject | TUNING RANGE | - |
dc.subject | BULK CMOS | - |
dc.subject | VCO | - |
dc.title | A D-Band Integrated Signal Source Based on SiGe 0.18 mu m BiCMOS Technology | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Rieh, Jae-Sung | - |
dc.identifier.doi | 10.5515/JKIEES.2015.15.4.232 | - |
dc.identifier.wosid | 000434609500006 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE, v.15, no.4, pp.232 - 238 | - |
dc.relation.isPartOf | JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE | - |
dc.citation.title | JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE | - |
dc.citation.volume | 15 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 232 | - |
dc.citation.endPage | 238 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002044657 | - |
dc.description.journalClass | 2 | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | OUTPUT POWER | - |
dc.subject.keywordPlus | TUNING RANGE | - |
dc.subject.keywordPlus | BULK CMOS | - |
dc.subject.keywordPlus | VCO | - |
dc.subject.keywordAuthor | Amplifier | - |
dc.subject.keywordAuthor | D-Band | - |
dc.subject.keywordAuthor | Frequency Doubler | - |
dc.subject.keywordAuthor | Oscillator | - |
dc.subject.keywordAuthor | Signal Source | - |
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