Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes

Abstract

The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O3 bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples an as-deposited sample and two samples post-annealed in N-2 gas and N-2-H-2 gas mixture were prepared and annealed at different temperatures ranging from 100 degrees C to 500 degrees C for comparison. Among these samples, the sample annealed at 300 degrees C in a mixture of N-2 and H-2 gases shows the lowest sheet resistance of 301.3 Omega/square and a high UV transmittance of 87.1% at 300 nm.