InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes
DC Field | Value | Language |
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dc.contributor.author | Kim, Sukwon | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-04T12:15:40Z | - |
dc.date.available | 2021-09-04T12:15:40Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-09-30 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/92434 | - |
dc.description.abstract | In this study, In-and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indiwum tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga2O3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 degrees C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 x 10-3 Omega-cm2 with a sheet resistance of 124 Omega/Upsilon. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | GAN | - |
dc.subject | PERFORMANCE | - |
dc.title | InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1016/j.tsf.2015.08.023 | - |
dc.identifier.scopusid | 2-s2.0-84942026364 | - |
dc.identifier.wosid | 000361651300007 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.591, pp.39 - 42 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 591 | - |
dc.citation.startPage | 39 | - |
dc.citation.endPage | 42 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Hydrogen annealing | - |
dc.subject.keywordAuthor | Indium gallium tin oxide | - |
dc.subject.keywordAuthor | Transparent conductive electrode | - |
dc.subject.keywordAuthor | Ultraviolet light-emitting diode | - |
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