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Analysis of Defects on Chemically-Treated CdZnTe Surfaces

Authors
Hossain, A.Bolotnikov, A. E.Camarda, G. S.Cui, Y.Gul, R.Kim, K. -H.Roy, U. N.Tong, X.Yang, G.James, R. B.
Issue Date
9월-2015
Publisher
SPRINGER
Keywords
CdZnTe; substrate and radiation detector; dislocations; chemo-mechanical polishing; metal-semiconductor interface
Citation
JOURNAL OF ELECTRONIC MATERIALS, v.44, no.9, pp.3018 - 3022
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF ELECTRONIC MATERIALS
Volume
44
Number
9
Start Page
3018
End Page
3022
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/92530
DOI
10.1007/s11664-015-3742-4
ISSN
0361-5235
Abstract
In this work, we focused on investigating the various defects that extend into the near-surface region of CdZnTe (CZT) crystals, and on exploring processing techniques for producing a smooth, non-conductive surface that is ideal for growing thin films and depositing contacts. We determined the surface's features and the chemical species present using atomic-force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy (SEM), coupled with energy-dispersive spectroscopy. We revealed crystallographic defects, e.g., sub-grains and dislocations on the CZT crystals' surfaces, after employing selected chemical etchants, and then characterized them using optical microscopy, SEM and optical profilometer. Our experimental data imply that the surface defects and chemical species induced by chemical processing may alter the material's interfacial behavior, and ultimately significantly influence the performance of radiation detectors.
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