Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer
- Authors
- Woo, Hyeonseok; Lee, Jongkyong; Jo, Yongcheol; Han, Jaeseok; Kim, Jongmin; Kim, Hyungsang; Roh, Cheong Hyun; Lee, Jun Ho; Park, Jungho; Hahn, Cheol-Koo; Im, Hyunsik
- Issue Date
- 9월-2015
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- AlGaN/GaN device; Schottky barrier diode; Turn-on voltage; Interface state density; Surface treatment; Oxygen annealing
- Citation
- CURRENT APPLIED PHYSICS, v.15, no.9, pp.1027 - 1031
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 15
- Number
- 9
- Start Page
- 1027
- End Page
- 1031
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/92589
- DOI
- 10.1016/j.cap.2015.06.004
- ISSN
- 1567-1739
- Abstract
- We report on the effect of oxygen annealing for GaN surface on the Schottky barrier configuration and leakage current in Ni-AlGaN/GaN Schottky barrier diodes. After oxygen annealing, their turn-on voltage and reverse- bias leakage current characteristics are significantly improved due to a reduction in the Schottky barrier height (SBH) and suppression in the surface states respectively. Interface state density extracted from the Terman method was reduced by 2 orders of magnitude. X-ray photoelectron spectroscopy measurements show that the oxygen annealing induces Ga2O3 on the GaN surface. The formation of Ga2O3 reduces the interface state density as well as lowers the SBH through the modification of hybridized metal induced gap states. (C) 2015 Elsevier B.V. All rights reserved.
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