Observations of New Dirac Points in One-Dimensionally-Rippled Graphene on Hexagonal BN Using Scanning Tunneling Spectroscopy
- Authors
- Jang, Won-Jun; Lee, Min Wook; Kim, Howon; Park, Sangwoo; Jung, Seong Jun; Lee, Sungjoo; Song, Young Jae; Kahng, Se-Jong
- Issue Date
- 20-8월-2015
- Publisher
- AMER CHEMICAL SOC
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY C, v.119, no.33, pp.19535 - 19538
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICAL CHEMISTRY C
- Volume
- 119
- Number
- 33
- Start Page
- 19535
- End Page
- 19538
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/92739
- DOI
- 10.1021/acs.jpcc.5b05835
- ISSN
- 1932-7447
- Abstract
- Theories predicted that one-dimensional superlattice potentials in graphene would induce new Dirac points, instead of gap opening, due to lattice-induced chirality of charge carriers, but experimental evidence is rarely available in the literature. Here, we report observations of new Dirac points in one-dimensionally rippled graphene on hexagonal boron nitride (h-BN) using scanning tunneling microscopy and spectroscopy. The rippled graphene, formed due to thermal procedures, showed two new Dirac points above and below the Fermi level. The energy difference between a new Dirac point and the Fermi level was proportional to 1/L, where L was the period of a ripple, in agreement with theoretical predictions. Our study shows that the one-dimensional periodic potential is an accessible component for controlling the electronic properties of graphene.
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